Self-healing of GaAs nanowires: An atomistic study
Fractured GaAs nanowires (NWs) with a zinc-blende structure can spontaneously self-heal throughout Ga–As re-bonding at fracture sites. In this paper, a systematic molecular dynamics study has been made with focus on the influence of lateral dimensions of GaAs NWs, multiple fractures and atomistic di...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Nil
2012
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| Online Access: | http://hdl.handle.net/20.500.11937/5911 |
| _version_ | 1848744928044122112 |
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| author | Wang, Jun Lu, Chunsheng Wang, Q. Xiao, P. Ke, F. Bai, Y. Shen, Y. Wang, Y. Chen, B. Liao, X. Gao, H. |
| author2 | Nil |
| author_facet | Nil Wang, Jun Lu, Chunsheng Wang, Q. Xiao, P. Ke, F. Bai, Y. Shen, Y. Wang, Y. Chen, B. Liao, X. Gao, H. |
| author_sort | Wang, Jun |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Fractured GaAs nanowires (NWs) with a zinc-blende structure can spontaneously self-heal throughout Ga–As re-bonding at fracture sites. In this paper, a systematic molecular dynamics study has been made with focus on the influence of lateral dimensions of GaAs NWs, multiple fractures and atomistic diffusion on the self-healing process. The results show that, as the lateral dimension increases from 2.31 to 9.23 nm, GaAs NWs lose their 46.0% capacity of self-healing. After 24 repeated cycles of fracture, the restored tensile strength of a NW reduces by 64.4%. Atomistic diffusion enhances the healing efficiency by eliminating mismatch of atoms. |
| first_indexed | 2025-11-14T06:09:15Z |
| format | Conference Paper |
| id | curtin-20.500.11937-5911 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T06:09:15Z |
| publishDate | 2012 |
| publisher | Nil |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-59112017-03-08T13:12:02Z Self-healing of GaAs nanowires: An atomistic study Wang, Jun Lu, Chunsheng Wang, Q. Xiao, P. Ke, F. Bai, Y. Shen, Y. Wang, Y. Chen, B. Liao, X. Gao, H. Nil Fractured GaAs nanowires (NWs) with a zinc-blende structure can spontaneously self-heal throughout Ga–As re-bonding at fracture sites. In this paper, a systematic molecular dynamics study has been made with focus on the influence of lateral dimensions of GaAs NWs, multiple fractures and atomistic diffusion on the self-healing process. The results show that, as the lateral dimension increases from 2.31 to 9.23 nm, GaAs NWs lose their 46.0% capacity of self-healing. After 24 repeated cycles of fracture, the restored tensile strength of a NW reduces by 64.4%. Atomistic diffusion enhances the healing efficiency by eliminating mismatch of atoms. 2012 Conference Paper http://hdl.handle.net/20.500.11937/5911 Nil restricted |
| spellingShingle | Wang, Jun Lu, Chunsheng Wang, Q. Xiao, P. Ke, F. Bai, Y. Shen, Y. Wang, Y. Chen, B. Liao, X. Gao, H. Self-healing of GaAs nanowires: An atomistic study |
| title | Self-healing of GaAs nanowires: An atomistic study |
| title_full | Self-healing of GaAs nanowires: An atomistic study |
| title_fullStr | Self-healing of GaAs nanowires: An atomistic study |
| title_full_unstemmed | Self-healing of GaAs nanowires: An atomistic study |
| title_short | Self-healing of GaAs nanowires: An atomistic study |
| title_sort | self-healing of gaas nanowires: an atomistic study |
| url | http://hdl.handle.net/20.500.11937/5911 |