Self-healing of GaAs nanowires: An atomistic study

Fractured GaAs nanowires (NWs) with a zinc-blende structure can spontaneously self-heal throughout Ga–As re-bonding at fracture sites. In this paper, a systematic molecular dynamics study has been made with focus on the influence of lateral dimensions of GaAs NWs, multiple fractures and atomistic di...

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Bibliographic Details
Main Authors: Wang, Jun, Lu, Chunsheng, Wang, Q., Xiao, P., Ke, F., Bai, Y., Shen, Y., Wang, Y., Chen, B., Liao, X., Gao, H.
Other Authors: Nil
Format: Conference Paper
Published: Nil 2012
Online Access:http://hdl.handle.net/20.500.11937/5911
Description
Summary:Fractured GaAs nanowires (NWs) with a zinc-blende structure can spontaneously self-heal throughout Ga–As re-bonding at fracture sites. In this paper, a systematic molecular dynamics study has been made with focus on the influence of lateral dimensions of GaAs NWs, multiple fractures and atomistic diffusion on the self-healing process. The results show that, as the lateral dimension increases from 2.31 to 9.23 nm, GaAs NWs lose their 46.0% capacity of self-healing. After 24 repeated cycles of fracture, the restored tensile strength of a NW reduces by 64.4%. Atomistic diffusion enhances the healing efficiency by eliminating mismatch of atoms.