Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings

We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-differen...

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Bibliographic Details
Main Authors: Das, Narottam, Karar, A., Tan, C., Vasiliev, M., Alameh, K., Lee, Y.
Format: Journal Article
Published: International Union of Pure and Applied Chemistry 2011
Online Access:http://hdl.handle.net/20.500.11937/56212
Description
Summary:We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs. © 2011 IUPAC.