Distribution level SiC FACTS devices with reduced DC bus capacitance for improved load capability and solar integration

QR Code

Distribution level SiC FACTS devices with reduced DC bus capacitance for improved load capability and solar integration

FACTS devices, such as STATCOMs and UPFCs can be directly applied in the low voltage distribution system to regulate the sequence voltages within a network while simultaneously cancelling zero and negative sequence currents that are introduced by load unbalance or by high levels of distributed photo...

Full description

Bibliographic Details
Main Authors:	Wolfs, Peter, Yang, F., Han, Q.
Format:	Conference Paper
Published:	2014
Online Access:	http://hdl.handle.net/20.500.11937/55316

Similar Items

A UPFC with reduced DC bus capacitance for LV distribution networks with high PV penetrations
by: Wolfs, Peter
Published: (2012)

Improvements to LV distribution system PV penetration limits using a dSTATCOM with reduced DC bus capacitance
by: Wolfs, Peter, et al.
Published: (2013)

Three phase UPFC regulator with reduced bus capacitance for solar PV application system
by: Uddin, Md. Nasir, et al.
Published: (2016)

A four-wire reduced bus capacitance UPFC for LV distribution networks with high PV penetrations
by: Haque, M., et al.
Published: (2014)

A reduced capacitance UPFC with active filtering capability for high PV penetration applications
by: Haque, M., et al.
Published: (2016)

Experimental and analytical performance evaluation of SiC power devices in the matrix converter
by: Safari, Saeed, et al.
Published: (2014)

Low parasitic inductance multi-chip SiC devices packaging technology
by: Li, Jianfeng, et al.
Published: (2016)

SiC MOSFET device parameter spread and ruggedness of parallel multichip structures
by: Castellazzi, Alberto, et al.
Published: (2018)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

SiC polytypes and doping nature effects on electrical properties of ZnO-SiC Schottky diodes
by: Rebaoui, Z., et al.
Published: (2017)

Computers and electronic devices waste: fundamental facts
by: Hameed, Shihab A.
Published: (2011)

SiC power MOSFETs performance, robustness and technology maturity
by: Castellazzi, Alberto, et al.
Published: (2016)

Phase and thermal stability in Ti3SiC2 and Ti3SiC2/TiC/TiSi2 systems
by: Pang, Wei Kong, et al.
Published: (2012)

Application of PSO technique for optimal location of FACTS devices
by: Suhairah, Razali
Published: (2009)

Role of FACTS devices in improving penetration of renewable energy
by: Saberian, Aminmohammad, et al.
Published: (2013)

DC-DC Converter for IOT Devices.
by: Phoon, Jun Hoe
Published: (2017)

Understanding large plastic deformation of SiC nanowires at room temperature
by: Wang, Jun, et al.
Published: (2011)

HfB2-SiC-MoSi2 oxidation resistance coating fabricated through in-situ synthesis for SiC coated C/C composites
by: Wang, Peipei, et al.
Published: (2017)

A unity power factor boost rectifier with a predictive capacitor model for high bandwidth DC bus voltage control.
by: Wolfs, Peter, et al.
Published: (2008)

A Unity Power Factor Boost Rectifier with a Predictive Capacitor Model for High Bandwidth DC Bus Voltage Control
by: Wolfs, Peter, et al.
Published: (2006)

UIS failure mechanism of SiC power MOSFETs
by: Fayyaz, Asad, et al.
Published: (2016)

Full SiC Version of the EDA5 Inverter
by: Chowdhury, Shajjad, et al.
Published: (2017)

Multidomain modelling of multichip SiC power modules
by: Olanrewaju, Olufisayo Abimbola
Published: (2020)

Performance and robustness characterisation of SiC power MOSFETs
by: Fayyaz, Asad
Published: (2018)

An experimental study on machining of SiC reinforced MMCs
by: Pramanik, Alokesh, et al.
Published: (2006)

Microstructure-dependent mechanical behaviors of SiC nanowires
by: Wang, Jun, et al.
Published: (2012)

Modular integrated SiC MOSFET matrix converter
by: Aliyu, Attahir Murtala, et al.
Published: (2017)

Nonlinear thermal expansion model for SiC/Al
by: Sahroni, Taufik Roni, et al.
Published: (2011)

Nonlinear Thermal Expansion Model for SiC/Al
by: Taufik, Roni Sahroni, et al.
Published: (2011)

Wireless pointing device using capacitive coupling
by: Abdul Rahman, Abdul Wahab, et al.
Published: (1997)

On basic definition of optimal allocation of FACTS devices in power system
by: Karami, Mahdi, et al.
Published: (2009)

Experimental comparison of a matrix converter using Si IGBT and SiC MOSFETs
by: Trentin, Andrew, et al.
Published: (2015)

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions
by: Li, Ke, et al.
Published: (2017)

Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime
by: Wang, Zhenyu, et al.
Published: (2018)

Body diode reliability investigation of SiC power MOSFETs
by: Fayyaz, A., et al.
Published: (2016)

Evaluation of SiC Schottky diodes using pressure contacts
by: Ortiz Gonzalez, J., et al.
Published: (2017)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

Transient out-of-SOA robustness of SiC power MOSFETs
by: Castellazzi, Alberto, et al.
Published: (2017)

IGBT-SiC dual fed ground power unit
by: Rovere, Luca, et al.
Published: (2017)

SiC-based power electronics for wind energy applications
by: Hussein, Abdallah Suliman
Published: (2019)