Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films
© 2016 American Chemical Society.Topological Dirac semimetals (TDS) are three-dimensional analogues of graphene, with linear electronic dispersions in three dimensions. Nanoscale confinement of TDSs in thin films is a necessary step toward observing the conventional-to-topological quantum phase tran...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
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American Chemical Society
2016
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| Online Access: | http://hdl.handle.net/20.500.11937/51112 |
| _version_ | 1848758618203095040 |
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| author | Hellerstedt, J. Edmonds, M. Ramakrishnan, N. Liu, C. Weber, B. Tadich, A. O'Donnell, Kane Adam, S. Fuhrer, M. |
| author_facet | Hellerstedt, J. Edmonds, M. Ramakrishnan, N. Liu, C. Weber, B. Tadich, A. O'Donnell, Kane Adam, S. Fuhrer, M. |
| author_sort | Hellerstedt, J. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | © 2016 American Chemical Society.Topological Dirac semimetals (TDS) are three-dimensional analogues of graphene, with linear electronic dispersions in three dimensions. Nanoscale confinement of TDSs in thin films is a necessary step toward observing the conventional-to-topological quantum phase transition (QPT) with increasing film thickness, gated devices for electric-field control of topological states, and devices with surface-state-dominated transport phenomena. Thin films can also be interfaced with superconductors (realizing a host for Majorana Fermions) or ferromagnets (realizing Weyl Fermions or T-broken topological states). Here we report structural and electrical characterization of large-area epitaxial thin films of TDS Na3Bi on single crystal Al2O3[0001] substrates. Charge carrier mobilities exceeding 6,000 cm2/(V s) and carrier densities below 1 × 1018 cm-3 are comparable to the best single crystal values. Perpendicular magnetoresistance at low field shows the perfect weak antilocalization behavior expected for Dirac Fermions in the absence of intervalley scattering. At higher fields up to 0.5 T anomalously large quadratic magnetoresistance is observed, indicating that some aspects of the low field magnetotransport (µB < 1) in this TDS are yet to be explained. |
| first_indexed | 2025-11-14T09:46:51Z |
| format | Journal Article |
| id | curtin-20.500.11937-51112 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T09:46:51Z |
| publishDate | 2016 |
| publisher | American Chemical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-511122017-09-13T15:35:11Z Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films Hellerstedt, J. Edmonds, M. Ramakrishnan, N. Liu, C. Weber, B. Tadich, A. O'Donnell, Kane Adam, S. Fuhrer, M. © 2016 American Chemical Society.Topological Dirac semimetals (TDS) are three-dimensional analogues of graphene, with linear electronic dispersions in three dimensions. Nanoscale confinement of TDSs in thin films is a necessary step toward observing the conventional-to-topological quantum phase transition (QPT) with increasing film thickness, gated devices for electric-field control of topological states, and devices with surface-state-dominated transport phenomena. Thin films can also be interfaced with superconductors (realizing a host for Majorana Fermions) or ferromagnets (realizing Weyl Fermions or T-broken topological states). Here we report structural and electrical characterization of large-area epitaxial thin films of TDS Na3Bi on single crystal Al2O3[0001] substrates. Charge carrier mobilities exceeding 6,000 cm2/(V s) and carrier densities below 1 × 1018 cm-3 are comparable to the best single crystal values. Perpendicular magnetoresistance at low field shows the perfect weak antilocalization behavior expected for Dirac Fermions in the absence of intervalley scattering. At higher fields up to 0.5 T anomalously large quadratic magnetoresistance is observed, indicating that some aspects of the low field magnetotransport (µB < 1) in this TDS are yet to be explained. 2016 Journal Article http://hdl.handle.net/20.500.11937/51112 10.1021/acs.nanolett.6b00638 American Chemical Society restricted |
| spellingShingle | Hellerstedt, J. Edmonds, M. Ramakrishnan, N. Liu, C. Weber, B. Tadich, A. O'Donnell, Kane Adam, S. Fuhrer, M. Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films |
| title | Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films |
| title_full | Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films |
| title_fullStr | Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films |
| title_full_unstemmed | Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films |
| title_short | Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films |
| title_sort | electronic properties of high-quality epitaxial topological dirac semimetal thin films |
| url | http://hdl.handle.net/20.500.11937/51112 |