Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime

We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, low...

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Main Authors: Edmonds, M., Hellerstedt, J., Tadich, A., Schenk, A., O'Donnell, Kane, Tosado, J., Butch, N., Syers, P., Paglione, J., Fuhrer, M.
Format: Journal Article
Published: American Chemical Society 2014
Subjects:
Online Access:http://hdl.handle.net/20.500.11937/4851
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author Edmonds, M.
Hellerstedt, J.
Tadich, A.
Schenk, A.
O'Donnell, Kane
Tosado, J.
Butch, N.
Syers, P.
Paglione, J.
Fuhrer, M.
author_facet Edmonds, M.
Hellerstedt, J.
Tadich, A.
Schenk, A.
O'Donnell, Kane
Tosado, J.
Butch, N.
Syers, P.
Paglione, J.
Fuhrer, M.
author_sort Edmonds, M.
building Curtin Institutional Repository
collection Online Access
description We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, lowering the surface Fermi energy to within ~100 meV of the Dirac point, well into the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.
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format Journal Article
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T06:04:33Z
publishDate 2014
publisher American Chemical Society
recordtype eprints
repository_type Digital Repository
spelling curtin-20.500.11937-48512017-09-13T14:44:02Z Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime Edmonds, M. Hellerstedt, J. Tadich, A. Schenk, A. O'Donnell, Kane Tosado, J. Butch, N. Syers, P. Paglione, J. Fuhrer, M. air-stable capping layer topological insulator molecular doping Bi2Se3 We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, lowering the surface Fermi energy to within ~100 meV of the Dirac point, well into the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer. 2014 Journal Article http://hdl.handle.net/20.500.11937/4851 10.1021/nn502031k American Chemical Society restricted
spellingShingle air-stable capping layer
topological insulator
molecular doping
Bi2Se3
Edmonds, M.
Hellerstedt, J.
Tadich, A.
Schenk, A.
O'Donnell, Kane
Tosado, J.
Butch, N.
Syers, P.
Paglione, J.
Fuhrer, M.
Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
title Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
title_full Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
title_fullStr Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
title_full_unstemmed Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
title_short Air-Stable Electron Depletion of Bi2Se3 Using Molybdenum Trioxide into the Topological Regime
title_sort air-stable electron depletion of bi2se3 using molybdenum trioxide into the topological regime
topic air-stable capping layer
topological insulator
molecular doping
Bi2Se3
url http://hdl.handle.net/20.500.11937/4851