Deformation-induced phase transformation in 4H-SiC nanopillars

The deformation behaviour of single-crystal SiC nanopillars was studied by a combination of in situ deformation transmission electron microscopy and molecular dynamics simulations. An unexpected deformation-induced phase transformation from the 4H hexagonal structure to the 3C face-centred cubic str...

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Main Authors: Chen, B., Wang, J., Zhu, Y., Liao, X., Lu, Chunsheng, Mai, Y., Ringer, S., Ke, F., Shen, Y.
Format: Journal Article
Published: Pergamon 2014
Subjects:
Online Access:http://hdl.handle.net/20.500.11937/47807
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author Chen, B.
Wang, J.
Zhu, Y.
Liao, X.
Lu, Chunsheng
Mai, Y.
Ringer, S.
Ke, F.
Shen, Y.
author_facet Chen, B.
Wang, J.
Zhu, Y.
Liao, X.
Lu, Chunsheng
Mai, Y.
Ringer, S.
Ke, F.
Shen, Y.
author_sort Chen, B.
building Curtin Institutional Repository
collection Online Access
description The deformation behaviour of single-crystal SiC nanopillars was studied by a combination of in situ deformation transmission electron microscopy and molecular dynamics simulations. An unexpected deformation-induced phase transformation from the 4H hexagonal structure to the 3C face-centred cubic structure was observed in these nanopillars at room temperature. Atomistic simulations revealed that the 4H to 3C phase transformation follows a stick–slip process with initiation and end stresses of 12.1–14.0 and 7.9–9.0 GPa, respectively. The experimentally measured stress of 9–10 GPa for the phase transformation falls within the range of these theoretical upper and lower stresses. The reasons for the phase transformation are discussed. The finding sheds light on the understanding of phase transformation in polytypic materials at low temperature.
first_indexed 2025-11-14T09:36:00Z
format Journal Article
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T09:36:00Z
publishDate 2014
publisher Pergamon
recordtype eprints
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spelling curtin-20.500.11937-478072018-03-29T09:07:32Z Deformation-induced phase transformation in 4H-SiC nanopillars Chen, B. Wang, J. Zhu, Y. Liao, X. Lu, Chunsheng Mai, Y. Ringer, S. Ke, F. Shen, Y. In situ deformation Transmission electron microscopy Molecular dynamics Phase transformation SiC nanopillars The deformation behaviour of single-crystal SiC nanopillars was studied by a combination of in situ deformation transmission electron microscopy and molecular dynamics simulations. An unexpected deformation-induced phase transformation from the 4H hexagonal structure to the 3C face-centred cubic structure was observed in these nanopillars at room temperature. Atomistic simulations revealed that the 4H to 3C phase transformation follows a stick–slip process with initiation and end stresses of 12.1–14.0 and 7.9–9.0 GPa, respectively. The experimentally measured stress of 9–10 GPa for the phase transformation falls within the range of these theoretical upper and lower stresses. The reasons for the phase transformation are discussed. The finding sheds light on the understanding of phase transformation in polytypic materials at low temperature. 2014 Journal Article http://hdl.handle.net/20.500.11937/47807 10.1016/j.actamat.2014.07.055 Pergamon restricted
spellingShingle In situ deformation
Transmission electron microscopy
Molecular dynamics
Phase transformation
SiC nanopillars
Chen, B.
Wang, J.
Zhu, Y.
Liao, X.
Lu, Chunsheng
Mai, Y.
Ringer, S.
Ke, F.
Shen, Y.
Deformation-induced phase transformation in 4H-SiC nanopillars
title Deformation-induced phase transformation in 4H-SiC nanopillars
title_full Deformation-induced phase transformation in 4H-SiC nanopillars
title_fullStr Deformation-induced phase transformation in 4H-SiC nanopillars
title_full_unstemmed Deformation-induced phase transformation in 4H-SiC nanopillars
title_short Deformation-induced phase transformation in 4H-SiC nanopillars
title_sort deformation-induced phase transformation in 4h-sic nanopillars
topic In situ deformation
Transmission electron microscopy
Molecular dynamics
Phase transformation
SiC nanopillars
url http://hdl.handle.net/20.500.11937/47807