Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol

The attachment of acetyl-protected alkynethiol groups onto silicon(100) surfaces was achieved using a hydrosilylation methodology. Subsequent deprotection of the thiols using either hydrochloric acid or ammonia solution was investigated using X-ray photoelectron spectroscopy (XPS), and compared with...

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Main Authors: Ng, C., Le Saux, G., Chockalingam, M., Ciampi, Simone, Harper, J., Gooding, J.
Format: Conference Paper
Published: 2010
Online Access:http://hdl.handle.net/20.500.11937/42676
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author Ng, C.
Le Saux, G.
Chockalingam, M.
Ciampi, Simone
Harper, J.
Gooding, J.
author_facet Ng, C.
Le Saux, G.
Chockalingam, M.
Ciampi, Simone
Harper, J.
Gooding, J.
author_sort Ng, C.
building Curtin Institutional Repository
collection Online Access
description The attachment of acetyl-protected alkynethiol groups onto silicon(100) surfaces was achieved using a hydrosilylation methodology. Subsequent deprotection of the thiols using either hydrochloric acid or ammonia solution was investigated using X-ray photoelectron spectroscopy (XPS), and compared with similar reaction in solution. It was found that ammonia solution was more efficient than hydrochloric acid for the deprotection step. However, the deprotection was much less efficient on the surface than in solution. © 2010 IEEE.
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spelling curtin-20.500.11937-426762018-03-29T09:07:46Z Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol Ng, C. Le Saux, G. Chockalingam, M. Ciampi, Simone Harper, J. Gooding, J. The attachment of acetyl-protected alkynethiol groups onto silicon(100) surfaces was achieved using a hydrosilylation methodology. Subsequent deprotection of the thiols using either hydrochloric acid or ammonia solution was investigated using X-ray photoelectron spectroscopy (XPS), and compared with similar reaction in solution. It was found that ammonia solution was more efficient than hydrochloric acid for the deprotection step. However, the deprotection was much less efficient on the surface than in solution. © 2010 IEEE. 2010 Conference Paper http://hdl.handle.net/20.500.11937/42676 10.1109/ICONN.2010.6045195 restricted
spellingShingle Ng, C.
Le Saux, G.
Chockalingam, M.
Ciampi, Simone
Harper, J.
Gooding, J.
Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
title Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
title_full Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
title_fullStr Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
title_full_unstemmed Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
title_short Preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
title_sort preparation of thiol-terminated monolayers on silicon(100) surfaces using thioacetyl-protected alkynethiol
url http://hdl.handle.net/20.500.11937/42676