Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

QR Code

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

Bibliographic Details
Main Authors:	Cui, X., Carter, Damien, Fuchs, M., Delley, B., Wei, S., Freeman, A., Stampfl, C.
Format:	Journal Article
Published:	American Physical Society 2010
Online Access:	http://hdl.handle.net/20.500.11937/42191

Similar Items

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)

Vacancies in GaN bulk and nanowires: effect of self-interaction corrections
by: Carter, Damien, et al.
Published: (2012)

Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles
by: Carter, Damien, et al.
Published: (2008)

Atomic and electronic structure of single and multiple vacancies in GaN nanowires from first-principles
by: Carter, Damien, et al.
Published: (2009)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
by: Tahan, Muliana
Published: (2021)

Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)

Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
by: Ahmad, M. A., et al.
Published: (2019)

Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
by: Czerniuk, T., et al.
Published: (2017)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
by: Samsudin, M. E. A., et al.
Published: (2019)

Anharmonic phonon decay in cubic GaN
by: Cuscó, R., et al.
Published: (2015)

Innovative Developments in GaN-based Technology
by: Hassan, Zainuriah
Published: (2016)

EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)

Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
by: C, W Chin, et al.
Published: (2007)

AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013)

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
by: Munir, Tariq
Published: (2011)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M, et al.
Published: (2020)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M., et al.
Published: (2020)

High-temperature thermal stability of Ti2AlN and Ti4AlN3: A comparative diffraction study
by: Low, It-Meng (Jim), et al.
Published: (2011)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
by: Podolska, Anna, et al.
Published: (2010)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
by: Moldovan, Grigore, et al.
Published: (2004)

Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method
by: Mohammad, Sabah M., et al.
Published: (2015)

Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
by: Ibrahim, N., et al.
Published: (2019)

GaN-HEMT dynamic ON-state resistance characterisation and modelling
by: Li, Ke, et al.
Published: (2016)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

Anisotropic electromechanical properties of GaN ceramics caused by polarisation
by: Qin, G.S., et al.
Published: (2020)

The influence of temperature on the electrical conductivity of GaN piezoelectric semiconductors
by: Qiao, Y., et al.
Published: (2023)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N. M., et al.
Published: (2020)

Properties of p-GaN Layer on Different Nitride Surfaces
by: Fatihah, N., et al.
Published: (2015)

Cannot write session to /tmp/vufind_sessions/sess_6qscb4ovicvfg98idh9jtm6kom