Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

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Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electro...

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Bibliographic Details
Main Authors:	Shakhvorostov, D., Nistor, R., Krusin-Elbaum, L., Martyna, G., Newns, D., Elmegreen, B., Liu, X., Hughes, Zak, Paul, S., Cabral, C., Raoux, S., Shrekenhamer, D., Basov, D., Song, Y., Mϋser, M.
Format:	Journal Article
Published:	National Academy of Sciences 2009
Online Access:	http://hdl.handle.net/20.500.11937/4149

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