Electronic structure of phosphorus and arsenic d-doped germanium
Density functional theory in the LDA+U approximation is used to calculate the electronic structure ofgermanium d doped with phosphorus and arsenic. We characterize the principal band minima of the twodimensional electron gas created by d doping and their dependence on the dopant concentration. Popul...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
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American Physical Society
2013
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/40678 |
| _version_ | 1848755935293472768 |
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| author | Carter, Damien Warschkow, O. Gale, Julian Scappucci, G. Klesse, W. Capellini, G. Rohl, Andrew Simmons, M. McKenzie, D. Marks, Nigel |
| author_facet | Carter, Damien Warschkow, O. Gale, Julian Scappucci, G. Klesse, W. Capellini, G. Rohl, Andrew Simmons, M. McKenzie, D. Marks, Nigel |
| author_sort | Carter, Damien |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Density functional theory in the LDA+U approximation is used to calculate the electronic structure ofgermanium d doped with phosphorus and arsenic. We characterize the principal band minima of the twodimensional electron gas created by d doping and their dependence on the dopant concentration. Populated first at low concentrations is a set of band minima at the perpendicular projection of the bulk conduction band minima at L into the (kx ,ky ) plane. At higher concentrations, band minima at and become involved. Valley splittings and effective masses are computed using an explicit-atom approach, taking into account the effects of disorder in the arrangement of dopant atoms in the d plane. |
| first_indexed | 2025-11-14T09:04:12Z |
| format | Journal Article |
| id | curtin-20.500.11937-40678 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T09:04:12Z |
| publishDate | 2013 |
| publisher | American Physical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-406782017-09-13T13:41:44Z Electronic structure of phosphorus and arsenic d-doped germanium Carter, Damien Warschkow, O. Gale, Julian Scappucci, G. Klesse, W. Capellini, G. Rohl, Andrew Simmons, M. McKenzie, D. Marks, Nigel d-doped germanium arsenic phosphorus Density functional theory in the LDA+U approximation is used to calculate the electronic structure ofgermanium d doped with phosphorus and arsenic. We characterize the principal band minima of the twodimensional electron gas created by d doping and their dependence on the dopant concentration. Populated first at low concentrations is a set of band minima at the perpendicular projection of the bulk conduction band minima at L into the (kx ,ky ) plane. At higher concentrations, band minima at and become involved. Valley splittings and effective masses are computed using an explicit-atom approach, taking into account the effects of disorder in the arrangement of dopant atoms in the d plane. 2013 Journal Article http://hdl.handle.net/20.500.11937/40678 10.1103/PhysRevB.88.115203 American Physical Society fulltext |
| spellingShingle | d-doped germanium arsenic phosphorus Carter, Damien Warschkow, O. Gale, Julian Scappucci, G. Klesse, W. Capellini, G. Rohl, Andrew Simmons, M. McKenzie, D. Marks, Nigel Electronic structure of phosphorus and arsenic d-doped germanium |
| title | Electronic structure of phosphorus and arsenic d-doped germanium |
| title_full | Electronic structure of phosphorus and arsenic d-doped germanium |
| title_fullStr | Electronic structure of phosphorus and arsenic d-doped germanium |
| title_full_unstemmed | Electronic structure of phosphorus and arsenic d-doped germanium |
| title_short | Electronic structure of phosphorus and arsenic d-doped germanium |
| title_sort | electronic structure of phosphorus and arsenic d-doped germanium |
| topic | d-doped germanium arsenic phosphorus |
| url | http://hdl.handle.net/20.500.11937/40678 |