Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition
Al 2O 3CaMgSi 2O 6 ceramics with different amount of CaMgSi 2O 6 additions were prepared by a conventional solid-state method, and the effects of CaMgSi...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Published: |
2012
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| Online Access: | http://hdl.handle.net/20.500.11937/40392 |
| _version_ | 1848755858275565568 |
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| author | Wang, H. Feng, S. Yang, W. Ma, H. Jia, Guohua Xu, S. |
| author_facet | Wang, H. Feng, S. Yang, W. Ma, H. Jia, Guohua Xu, S. |
| author_sort | Wang, H. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Al 2O 3CaMgSi 2O 6 ceramics with different amount of CaMgSi 2O 6 additions were prepared by a conventional solid-state method, and the effects of CaMgSi 2O 6 addition on the sintering behavior and dielectric properties of Al 2O 3 ceramics have been investigated. CaMgSi 2O 6 was used as a liquid sintering aid to effectively lower the sintering temperature of Al 2O 3 ceramics and its addition resulted in the presence of CaAl 2Si 2O 8 and MgAl 2O 4 phases. However, the CaMgSi 2O 6 addition deteriorated the dielectric properties of Al 2O 3CaMgSi 2O 6 ceramics because of the higher dielectric loss of the derived CaAl 2Si 2O 8 and MgAl 2O 4 compared with that of Al 2O 3 ceramics. After sintered at 1450°C, the Al 2O 3CaMgSi 2O 6 ceramic with 10 wt% CaMgSi 2O 6 addition possessed dielectric properties of e r = 9.83, tan d = 1.5 × 10 -4 (1 MHz) and Q × f = 20,425GHz (f 0 = 12 GHz). © 2012 The Ceramic Society of Japan. |
| first_indexed | 2025-11-14T09:02:59Z |
| format | Journal Article |
| id | curtin-20.500.11937-40392 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T09:02:59Z |
| publishDate | 2012 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-403922017-01-30T14:42:18Z Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition Wang, H. Feng, S. Yang, W. Ma, H. Jia, Guohua Xu, S. Al 2O 3CaMgSi 2O 6 ceramics with different amount of CaMgSi 2O 6 additions were prepared by a conventional solid-state method, and the effects of CaMgSi 2O 6 addition on the sintering behavior and dielectric properties of Al 2O 3 ceramics have been investigated. CaMgSi 2O 6 was used as a liquid sintering aid to effectively lower the sintering temperature of Al 2O 3 ceramics and its addition resulted in the presence of CaAl 2Si 2O 8 and MgAl 2O 4 phases. However, the CaMgSi 2O 6 addition deteriorated the dielectric properties of Al 2O 3CaMgSi 2O 6 ceramics because of the higher dielectric loss of the derived CaAl 2Si 2O 8 and MgAl 2O 4 compared with that of Al 2O 3 ceramics. After sintered at 1450°C, the Al 2O 3CaMgSi 2O 6 ceramic with 10 wt% CaMgSi 2O 6 addition possessed dielectric properties of e r = 9.83, tan d = 1.5 × 10 -4 (1 MHz) and Q × f = 20,425GHz (f 0 = 12 GHz). © 2012 The Ceramic Society of Japan. 2012 Journal Article http://hdl.handle.net/20.500.11937/40392 restricted |
| spellingShingle | Wang, H. Feng, S. Yang, W. Ma, H. Jia, Guohua Xu, S. Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition |
| title | Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition |
| title_full | Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition |
| title_fullStr | Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition |
| title_full_unstemmed | Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition |
| title_short | Sintering behavior and dielectric properties of Al 2O 3 ceramics with CaMgSi 2O 6 addition |
| title_sort | sintering behavior and dielectric properties of al 2o 3 ceramics with camgsi 2o 6 addition |
| url | http://hdl.handle.net/20.500.11937/40392 |