Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes

Eu 3-doped Sr 2Si 1-xGe xO 4 (x=0-1) phosphors have been prepared by the high temperature solid-state reaction method. The luminescent properties of these phosphors were investigat...

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Main Authors: Huang, L., Xu, S., Guo, M., Wang, C., Hua, Y., Zhao, S., Deng, D., Wang, H., Jia, Guohua
Format: Journal Article
Published: Pergamon 2012
Online Access:http://hdl.handle.net/20.500.11937/37280
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author Huang, L.
Xu, S.
Guo, M.
Wang, C.
Hua, Y.
Zhao, S.
Deng, D.
Wang, H.
Jia, Guohua
author_facet Huang, L.
Xu, S.
Guo, M.
Wang, C.
Hua, Y.
Zhao, S.
Deng, D.
Wang, H.
Jia, Guohua
author_sort Huang, L.
building Curtin Institutional Repository
collection Online Access
description Eu 3-doped Sr 2Si 1-xGe xO 4 (x=0-1) phosphors have been prepared by the high temperature solid-state reaction method. The luminescent properties of these phosphors were investigated. Red fluorescence of Eu 3 is enhanced gradually in the samples with increasing substitution of Si by Ge upon the excitation of 393 nm light. The intensity is increased by 50% with full substitution of Si by Ge. These results are originated from the structural changes and the phonon energy reduction in the samples due to the substitution of Si by Ge. The CIE chromaticity coordinates of the phosphors vary slightly around (0.62, 0.37) and all are in the red color region. The results indicate that these phosphors could be promising red phosphors for white light emitting diodes. © 2012 Elsevier Ltd.
first_indexed 2025-11-14T08:49:24Z
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T08:49:24Z
publishDate 2012
publisher Pergamon
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spelling curtin-20.500.11937-372802017-09-13T13:38:13Z Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes Huang, L. Xu, S. Guo, M. Wang, C. Hua, Y. Zhao, S. Deng, D. Wang, H. Jia, Guohua Eu 3-doped Sr 2Si 1-xGe xO 4 (x=0-1) phosphors have been prepared by the high temperature solid-state reaction method. The luminescent properties of these phosphors were investigated. Red fluorescence of Eu 3 is enhanced gradually in the samples with increasing substitution of Si by Ge upon the excitation of 393 nm light. The intensity is increased by 50% with full substitution of Si by Ge. These results are originated from the structural changes and the phonon energy reduction in the samples due to the substitution of Si by Ge. The CIE chromaticity coordinates of the phosphors vary slightly around (0.62, 0.37) and all are in the red color region. The results indicate that these phosphors could be promising red phosphors for white light emitting diodes. © 2012 Elsevier Ltd. 2012 Journal Article http://hdl.handle.net/20.500.11937/37280 10.1016/j.jpcs.2012.02.014 Pergamon restricted
spellingShingle Huang, L.
Xu, S.
Guo, M.
Wang, C.
Hua, Y.
Zhao, S.
Deng, D.
Wang, H.
Jia, Guohua
Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes
title Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes
title_full Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes
title_fullStr Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes
title_full_unstemmed Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes
title_short Enhanced red fluorescence in Sr 2Si 1-xGe xO 4:Eu 3+ phosphors by the substitution of Si by Ge for white light emitting diodes
title_sort enhanced red fluorescence in sr 2si 1-xge xo 4:eu 3+ phosphors by the substitution of si by ge for white light emitting diodes
url http://hdl.handle.net/20.500.11937/37280