Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography

Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out...

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Main Authors: Müller, M., Saxey, David, Cerezo, A., Smith, G.
Format: Conference Paper
Published: 2010
Online Access:http://hdl.handle.net/20.500.11937/35019
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author Müller, M.
Saxey, David
Cerezo, A.
Smith, G.
author_facet Müller, M.
Saxey, David
Cerezo, A.
Smith, G.
author_sort Müller, M.
building Curtin Institutional Repository
collection Online Access
description Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out and annular milling. An InAs buried quantum dot material was studied using laser-pulsed atom probe. The dot size, morphology and composition were evaluated as well as the wetting layers and interface composition. A laterally shifted In-rich core was visualised within the dots. Furthermore, a GeMn-based thin film was investigated to better-understand the mechanisms leading to the magnetic characteristics of this material system, which has potential applications as a magnetic semiconductor. We conclude that laser-pulsed atom probe has great potential for compound semiconductor research. © 2010 IOP Publishing Ltd.
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spelling curtin-20.500.11937-350192017-09-13T15:28:49Z Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography Müller, M. Saxey, David Cerezo, A. Smith, G. Laser-pulsed atom probe tomography is introduced as a novel tomographic technique and its basic principles are explained. Atom probe provides 3-dimensional chemical maps with nanoscale resolution. For semiconductor research, needle-shaped atom probe samples are produced by focused ion beam lift-out and annular milling. An InAs buried quantum dot material was studied using laser-pulsed atom probe. The dot size, morphology and composition were evaluated as well as the wetting layers and interface composition. A laterally shifted In-rich core was visualised within the dots. Furthermore, a GeMn-based thin film was investigated to better-understand the mechanisms leading to the magnetic characteristics of this material system, which has potential applications as a magnetic semiconductor. We conclude that laser-pulsed atom probe has great potential for compound semiconductor research. © 2010 IOP Publishing Ltd. 2010 Conference Paper http://hdl.handle.net/20.500.11937/35019 10.1088/1742-6596/209/1/012026 unknown
spellingShingle Müller, M.
Saxey, David
Cerezo, A.
Smith, G.
Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
title Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
title_full Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
title_fullStr Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
title_full_unstemmed Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
title_short Nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
title_sort nanoscale characterization of compound semiconductors using laser-pulsed atom probe tomography
url http://hdl.handle.net/20.500.11937/35019