Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers

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Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers

We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a...

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Bibliographic Details
Main Authors:	Tandoi, G., Ironside, Charlie, Marsh, J., Bryce, A.
Format:	Journal Article
Published:	2012
Online Access:	http://hdl.handle.net/20.500.11937/34061

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