Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors

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Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors

Nanostructured metal–semiconductor–metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity-bandwidth characteristics. We numerically evaluate the periodic nanotextured structures that provide for the confinement of light and concentration...

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Bibliographic Details
Main Authors:	Das, Narottam, Masouleh, F., Mashayekhi, H.
Format:	Journal Article
Published:	Institute of Electrical and Electronics Engineers 2014
Online Access:	http://hdl.handle.net/20.500.11937/32358

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