Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors
Nanostructured metal–semiconductor–metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity-bandwidth characteristics. We numerically evaluate the periodic nanotextured structures that provide for the confinement of light and concentration...
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| Format: | Journal Article |
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Institute of Electrical and Electronics Engineers
2014
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| Online Access: | http://hdl.handle.net/20.500.11937/32358 |
| _version_ | 1848753641453780992 |
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| author | Das, Narottam Masouleh, F. Mashayekhi, H. |
| author_facet | Das, Narottam Masouleh, F. Mashayekhi, H. |
| author_sort | Das, Narottam |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Nanostructured metal–semiconductor–metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity-bandwidth characteristics. We numerically evaluate the periodic nanotextured structures that provide for the confinement of light and concentration of energy near the designed wavelength, a feature attributed to surface plasmon polaritons. This plasmonic-based miniaturization provides a new approach to investigate remarkable optical properties of nanoscale device structuring.Afinite-difference timedomainmethod is used to calculate the maximum light absorption and reflection of nanograting-assisted MSM-PDs by varying detector’s physical parameters in comparison with a conventionaldevice. The horizontal and vertical surface resonances are identified as the key mechanisms to excite the surface waves with the aid of normally incident TM-polarized light. The extraordinaryoptical transmission is notably enhanced by optimizing the grating parameters and light incident angles. The simulation results are presented for light absorption and reflection in the subwavelengthregion of nanograting-assisted MSM-PDs compared with the conventional MSM-PDs. |
| first_indexed | 2025-11-14T08:27:45Z |
| format | Journal Article |
| id | curtin-20.500.11937-32358 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T08:27:45Z |
| publishDate | 2014 |
| publisher | Institute of Electrical and Electronics Engineers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-323582017-01-30T13:30:34Z Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors Das, Narottam Masouleh, F. Mashayekhi, H. Nanostructured metal–semiconductor–metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity-bandwidth characteristics. We numerically evaluate the periodic nanotextured structures that provide for the confinement of light and concentration of energy near the designed wavelength, a feature attributed to surface plasmon polaritons. This plasmonic-based miniaturization provides a new approach to investigate remarkable optical properties of nanoscale device structuring.Afinite-difference timedomainmethod is used to calculate the maximum light absorption and reflection of nanograting-assisted MSM-PDs by varying detector’s physical parameters in comparison with a conventionaldevice. The horizontal and vertical surface resonances are identified as the key mechanisms to excite the surface waves with the aid of normally incident TM-polarized light. The extraordinaryoptical transmission is notably enhanced by optimizing the grating parameters and light incident angles. The simulation results are presented for light absorption and reflection in the subwavelengthregion of nanograting-assisted MSM-PDs compared with the conventional MSM-PDs. 2014 Journal Article http://hdl.handle.net/20.500.11937/32358 Institute of Electrical and Electronics Engineers restricted |
| spellingShingle | Das, Narottam Masouleh, F. Mashayekhi, H. Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors |
| title | Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors |
| title_full | Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors |
| title_fullStr | Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors |
| title_full_unstemmed | Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors |
| title_short | Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors |
| title_sort | light absorption and reflection in nanostructured gaas metal-semiconductor-metal photodetectors |
| url | http://hdl.handle.net/20.500.11937/32358 |