An ab initio study of C60 adsorption on the Si(001) surface

Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(001) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sit...

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Main Authors: Gale, Julian, Hobbs, C, Kantorovich, L
Format: Journal Article
Published: Elsevier Science BV 2005
Online Access:http://hdl.handle.net/20.500.11937/28688
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author Gale, Julian
Hobbs, C
Kantorovich, L
author_facet Gale, Julian
Hobbs, C
Kantorovich, L
author_sort Gale, Julian
building Curtin Institutional Repository
collection Online Access
description Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(001) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C?C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.2005 Elsevier B.V. All rights reserved.
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spelling curtin-20.500.11937-286882018-10-03T07:28:27Z An ab initio study of C60 adsorption on the Si(001) surface Gale, Julian Hobbs, C Kantorovich, L Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(001) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C?C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.2005 Elsevier B.V. All rights reserved. 2005 Journal Article http://hdl.handle.net/20.500.11937/28688 10.1016/j.susc.2005.06.038 Elsevier Science BV restricted
spellingShingle Gale, Julian
Hobbs, C
Kantorovich, L
An ab initio study of C60 adsorption on the Si(001) surface
title An ab initio study of C60 adsorption on the Si(001) surface
title_full An ab initio study of C60 adsorption on the Si(001) surface
title_fullStr An ab initio study of C60 adsorption on the Si(001) surface
title_full_unstemmed An ab initio study of C60 adsorption on the Si(001) surface
title_short An ab initio study of C60 adsorption on the Si(001) surface
title_sort ab initio study of c60 adsorption on the si(001) surface
url http://hdl.handle.net/20.500.11937/28688