Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

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Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

This study addresses the ongoing debate concerning the distribution of indium in InxGa1−xN quantum wells(QWs) using a combination of atom probe tomography (APT) and transmission electron microscopy(TEM). APT analysis of InxGa1−xN QWs, which had been exposed to the electron beam in a TEM, revealed an...

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Bibliographic Details
Main Authors:	Bennett, S., Saxey, David, Kappers, M., Barnard, J., Humphreys, C., Smith, G., Oliver, R.
Format:	Journal Article
Published:	2011
Online Access:	http://hdl.handle.net/20.500.11937/25817

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