Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
This study addresses the ongoing debate concerning the distribution of indium in InxGa1−xN quantum wells(QWs) using a combination of atom probe tomography (APT) and transmission electron microscopy(TEM). APT analysis of InxGa1−xN QWs, which had been exposed to the electron beam in a TEM, revealed an...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/20.500.11937/25817 |
| _version_ | 1848751813013012480 |
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| author | Bennett, S. Saxey, David Kappers, M. Barnard, J. Humphreys, C. Smith, G. Oliver, R. |
| author_facet | Bennett, S. Saxey, David Kappers, M. Barnard, J. Humphreys, C. Smith, G. Oliver, R. |
| author_sort | Bennett, S. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | This study addresses the ongoing debate concerning the distribution of indium in InxGa1−xN quantum wells(QWs) using a combination of atom probe tomography (APT) and transmission electron microscopy(TEM). APT analysis of InxGa1−xN QWs, which had been exposed to the electron beam in a TEM, revealed an inhomogeneous indium distribution which was not observed in a control sample which had not been exposed to the electron beam. These data validate the effectiveness of APT in detecting subtle compositional inhomogeneities in the nitrides. |
| first_indexed | 2025-11-14T07:58:41Z |
| format | Journal Article |
| id | curtin-20.500.11937-25817 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:58:41Z |
| publishDate | 2011 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-258172017-09-13T15:24:46Z Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells Bennett, S. Saxey, David Kappers, M. Barnard, J. Humphreys, C. Smith, G. Oliver, R. This study addresses the ongoing debate concerning the distribution of indium in InxGa1−xN quantum wells(QWs) using a combination of atom probe tomography (APT) and transmission electron microscopy(TEM). APT analysis of InxGa1−xN QWs, which had been exposed to the electron beam in a TEM, revealed an inhomogeneous indium distribution which was not observed in a control sample which had not been exposed to the electron beam. These data validate the effectiveness of APT in detecting subtle compositional inhomogeneities in the nitrides. 2011 Journal Article http://hdl.handle.net/20.500.11937/25817 10.1063/1.3610468 restricted |
| spellingShingle | Bennett, S. Saxey, David Kappers, M. Barnard, J. Humphreys, C. Smith, G. Oliver, R. Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells |
| title | Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells |
| title_full | Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells |
| title_fullStr | Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells |
| title_full_unstemmed | Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells |
| title_short | Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells |
| title_sort | atom probe tomography assessment of the impact of electron beam exposure on inxga1-xn/gan quantum wells |
| url | http://hdl.handle.net/20.500.11937/25817 |