High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

We report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured pho...

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Main Authors: Karar, A., Das, Narottam, Tan, C., Alameh, K., Lee, Y., Karouta, F.
Format: Journal Article
Published: American Institute of Physics 2011
Online Access:http://hdl.handle.net/20.500.11937/22875
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author Karar, A.
Das, Narottam
Tan, C.
Alameh, K.
Lee, Y.
Karouta, F.
author_facet Karar, A.
Das, Narottam
Tan, C.
Alameh, K.
Lee, Y.
Karouta, F.
author_sort Karar, A.
building Curtin Institutional Repository
collection Online Access
description We report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.
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format Journal Article
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institution Curtin University Malaysia
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last_indexed 2025-11-14T07:45:41Z
publishDate 2011
publisher American Institute of Physics
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spelling curtin-20.500.11937-228752018-03-29T09:06:48Z High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors Karar, A. Das, Narottam Tan, C. Alameh, K. Lee, Y. Karouta, F. We report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD. 2011 Journal Article http://hdl.handle.net/20.500.11937/22875 10.1063/1.3625937 American Institute of Physics restricted
spellingShingle Karar, A.
Das, Narottam
Tan, C.
Alameh, K.
Lee, Y.
Karouta, F.
High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
title High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
title_full High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
title_fullStr High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
title_full_unstemmed High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
title_short High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors
title_sort high-responsivity plasmonics-based gaas metal-semiconductor-metal photodetectors
url http://hdl.handle.net/20.500.11937/22875