High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

We report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured pho...

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Bibliographic Details
Main Authors: Karar, A., Das, Narottam, Tan, C., Alameh, K., Lee, Y., Karouta, F.
Format: Journal Article
Published: American Institute of Physics 2011
Online Access:http://hdl.handle.net/20.500.11937/22875
Description
Summary:We report the experimental characterization of high-responsivity plasmonics-based GaAsmetal-semiconductor-metalphotodetector (MSM-PD) employing metal nano-gratings. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. The measured photocurrent enhancement is 4-times in comparison with a conventional single-slit MSM-PD. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing a high-responsivity, low bias-voltage high-speed MSM-PD.