Electronic structure of two interacting phosphorus δ-doped layers in silicon

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Electronic structure of two interacting phosphorus δ-doped layers in silicon

Density functional theory is used to quantify the interaction of a pair of 1/4-monolayer phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as the distance between the two δ-doped layers is altered and identify the onset of interactions between the transverse an...

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Bibliographic Details
Main Authors:	Carter, Damien, Warschkow, O., Marks, Nigel, McKenzie, D.
Format:	Journal Article
Published:	American Physical Society 2013
Online Access:	http://hdl.handle.net/20.500.11937/22808

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