Electronic structure of two interacting phosphorus δ-doped layers in silicon
Density functional theory is used to quantify the interaction of a pair of 1/4-monolayer phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as the distance between the two δ-doped layers is altered and identify the onset of interactions between the transverse an...
| Main Authors: | , , , |
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| Format: | Journal Article |
| Published: |
American Physical Society
2013
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| Online Access: | http://hdl.handle.net/20.500.11937/22808 |
| _version_ | 1848750974848466944 |
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| author | Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. |
| author_facet | Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. |
| author_sort | Carter, Damien |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Density functional theory is used to quantify the interaction of a pair of 1/4-monolayer phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as the distance between the two δ-doped layers is altered and identify the onset of interactions between the transverse and longitudinal bands. The calculations show that the valley splitting is insensitive to the separation distance, while the interlayer band splittings are insensitive to the representation used to describe the dopant disorder. These observations are exploited in a hybrid model which enables the calculation of accurate splittings of realistically disordered systems at tractable computational cost. |
| first_indexed | 2025-11-14T07:45:22Z |
| format | Journal Article |
| id | curtin-20.500.11937-22808 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:45:22Z |
| publishDate | 2013 |
| publisher | American Physical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-228082017-09-13T16:00:11Z Electronic structure of two interacting phosphorus δ-doped layers in silicon Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. Density functional theory is used to quantify the interaction of a pair of 1/4-monolayer phosphorus δ-doped layers in silicon. We investigate changes in the electronic structure as the distance between the two δ-doped layers is altered and identify the onset of interactions between the transverse and longitudinal bands. The calculations show that the valley splitting is insensitive to the separation distance, while the interlayer band splittings are insensitive to the representation used to describe the dopant disorder. These observations are exploited in a hybrid model which enables the calculation of accurate splittings of realistically disordered systems at tractable computational cost. 2013 Journal Article http://hdl.handle.net/20.500.11937/22808 10.1103/PhysRevB.87.045204 American Physical Society fulltext |
| spellingShingle | Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. Electronic structure of two interacting phosphorus δ-doped layers in silicon |
| title | Electronic structure of two interacting phosphorus δ-doped layers in silicon |
| title_full | Electronic structure of two interacting phosphorus δ-doped layers in silicon |
| title_fullStr | Electronic structure of two interacting phosphorus δ-doped layers in silicon |
| title_full_unstemmed | Electronic structure of two interacting phosphorus δ-doped layers in silicon |
| title_short | Electronic structure of two interacting phosphorus δ-doped layers in silicon |
| title_sort | electronic structure of two interacting phosphorus δ-doped layers in silicon |
| url | http://hdl.handle.net/20.500.11937/22808 |