Bottom-up assembly of metallic germanium
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated las...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Journal Article |
| Published: |
Nature Publishing Group
2015
|
| Online Access: | http://hdl.handle.net/20.500.11937/21833 |
| _version_ | 1848750700833538048 |
|---|---|
| author | Scappucci, G. Klesse, W. Yeoh, L.A. Carter, Damien Warschkow, O. Marks, Nigel Jaeger, D.L. Capellini, G. Simmons, M.Y. Hamilton, A. |
| author_facet | Scappucci, G. Klesse, W. Yeoh, L.A. Carter, Damien Warschkow, O. Marks, Nigel Jaeger, D.L. Capellini, G. Simmons, M.Y. Hamilton, A. |
| author_sort | Scappucci, G. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω ∙ cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory. |
| first_indexed | 2025-11-14T07:41:00Z |
| format | Journal Article |
| id | curtin-20.500.11937-21833 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:41:00Z |
| publishDate | 2015 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-218332017-09-13T13:52:23Z Bottom-up assembly of metallic germanium Scappucci, G. Klesse, W. Yeoh, L.A. Carter, Damien Warschkow, O. Marks, Nigel Jaeger, D.L. Capellini, G. Simmons, M.Y. Hamilton, A. Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω ∙ cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory. 2015 Journal Article http://hdl.handle.net/20.500.11937/21833 10.1038/srep12948 Nature Publishing Group fulltext |
| spellingShingle | Scappucci, G. Klesse, W. Yeoh, L.A. Carter, Damien Warschkow, O. Marks, Nigel Jaeger, D.L. Capellini, G. Simmons, M.Y. Hamilton, A. Bottom-up assembly of metallic germanium |
| title | Bottom-up assembly of metallic germanium |
| title_full | Bottom-up assembly of metallic germanium |
| title_fullStr | Bottom-up assembly of metallic germanium |
| title_full_unstemmed | Bottom-up assembly of metallic germanium |
| title_short | Bottom-up assembly of metallic germanium |
| title_sort | bottom-up assembly of metallic germanium |
| url | http://hdl.handle.net/20.500.11937/21833 |