Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction
Copyright © Materials Research Society 2016.Titania nanotube arrays were synthesized electrochemically by anodization of titanium foils, and the synthesized titania nanotubes were then implanted with indium ions. The effect of In-ions implantation on crystallization and phase transformation of titan...
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| Format: | Journal Article |
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Cambridge University Press
2016
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| Online Access: | http://hdl.handle.net/20.500.11937/20207 |
| _version_ | 1848750242801909760 |
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| author | Albetran, H. Low, It Meng |
| author_facet | Albetran, H. Low, It Meng |
| author_sort | Albetran, H. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Copyright © Materials Research Society 2016.Titania nanotube arrays were synthesized electrochemically by anodization of titanium foils, and the synthesized titania nanotubes were then implanted with indium ions. The effect of In-ions implantation on crystallization and phase transformation of titania was investigated using in-situ high-temperature X-ray diffraction and synchrotron radiation diffraction from room temperature to 1000 °C. Diffraction results show that crystalline anatase first appeared at 400 °C in both the non-implanted and the In-implanted materials. The temperature at which crystalline rutile temperature appeared was 600 °C for non-implanted materials and 700 °C for In-implanted materials, and the indium implantation inhibited the anatase-to-rutile transformation. Although In3+ is expected to increase oxygen vacancy concentration and then the rate of titania transformation, the observations are consistent with implanted In-ions occupying the Ti sublattice substitutionally and then inhibiting the transformation. The relatively difficult anatase-to-rutile transformation in the In-implanted material appears to result from the relatively large In3+ radius (0.080 nm). The In3+ partly replaces the Ti4+ (0.061 nm), which provides a greater structural rigidity and prevents relaxation in the Ti bonding environment. |
| first_indexed | 2025-11-14T07:33:43Z |
| format | Journal Article |
| id | curtin-20.500.11937-20207 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:33:43Z |
| publishDate | 2016 |
| publisher | Cambridge University Press |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-202072017-09-13T13:50:23Z Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction Albetran, H. Low, It Meng Copyright © Materials Research Society 2016.Titania nanotube arrays were synthesized electrochemically by anodization of titanium foils, and the synthesized titania nanotubes were then implanted with indium ions. The effect of In-ions implantation on crystallization and phase transformation of titania was investigated using in-situ high-temperature X-ray diffraction and synchrotron radiation diffraction from room temperature to 1000 °C. Diffraction results show that crystalline anatase first appeared at 400 °C in both the non-implanted and the In-implanted materials. The temperature at which crystalline rutile temperature appeared was 600 °C for non-implanted materials and 700 °C for In-implanted materials, and the indium implantation inhibited the anatase-to-rutile transformation. Although In3+ is expected to increase oxygen vacancy concentration and then the rate of titania transformation, the observations are consistent with implanted In-ions occupying the Ti sublattice substitutionally and then inhibiting the transformation. The relatively difficult anatase-to-rutile transformation in the In-implanted material appears to result from the relatively large In3+ radius (0.080 nm). The In3+ partly replaces the Ti4+ (0.061 nm), which provides a greater structural rigidity and prevents relaxation in the Ti bonding environment. 2016 Journal Article http://hdl.handle.net/20.500.11937/20207 10.1557/jmr.2016.83 Cambridge University Press restricted |
| spellingShingle | Albetran, H. Low, It Meng Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| title | Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| title_full | Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| title_fullStr | Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| title_full_unstemmed | Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| title_short | Effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| title_sort | effect of indium ion implantation on crystallization kinetics and phase transformation of anodized titania nanotubes using in-situ high-temperature radiation diffraction |
| url | http://hdl.handle.net/20.500.11937/20207 |