Investigation of mid-infrared AlInSb LEDs with an n-i-p structure
We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high el...
| Main Authors: | , , , , , , |
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| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2015
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| Online Access: | http://hdl.handle.net/20.500.11937/19225 |
| _version_ | 1848749971808976896 |
|---|---|
| author | Ding, Y. Meriggi, L. Steer, M. Thayne, I. MacGregor, C. Sorel, M. Ironside, Charlie |
| author_facet | Ding, Y. Meriggi, L. Steer, M. Thayne, I. MacGregor, C. Sorel, M. Ironside, Charlie |
| author_sort | Ding, Y. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results. |
| first_indexed | 2025-11-14T07:29:25Z |
| format | Conference Paper |
| id | curtin-20.500.11937-19225 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:29:25Z |
| publishDate | 2015 |
| publisher | Institute of Electrical and Electronics Engineers Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-192252018-03-29T09:06:20Z Investigation of mid-infrared AlInSb LEDs with an n-i-p structure Ding, Y. Meriggi, L. Steer, M. Thayne, I. MacGregor, C. Sorel, M. Ironside, Charlie We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results. 2015 Conference Paper http://hdl.handle.net/20.500.11937/19225 10.1109/COMMAD.2014.7038646 Institute of Electrical and Electronics Engineers Inc. restricted |
| spellingShingle | Ding, Y. Meriggi, L. Steer, M. Thayne, I. MacGregor, C. Sorel, M. Ironside, Charlie Investigation of mid-infrared AlInSb LEDs with an n-i-p structure |
| title | Investigation of mid-infrared AlInSb LEDs with an n-i-p structure |
| title_full | Investigation of mid-infrared AlInSb LEDs with an n-i-p structure |
| title_fullStr | Investigation of mid-infrared AlInSb LEDs with an n-i-p structure |
| title_full_unstemmed | Investigation of mid-infrared AlInSb LEDs with an n-i-p structure |
| title_short | Investigation of mid-infrared AlInSb LEDs with an n-i-p structure |
| title_sort | investigation of mid-infrared alinsb leds with an n-i-p structure |
| url | http://hdl.handle.net/20.500.11937/19225 |