Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high el...

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Bibliographic Details
Main Authors: Ding, Y., Meriggi, L., Steer, M., Thayne, I., MacGregor, C., Sorel, M., Ironside, Charlie
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2015
Online Access:http://hdl.handle.net/20.500.11937/19225
Description
Summary:We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.

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