Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204))
| Main Authors: | , , , |
|---|---|
| Format: | Journal Article |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/20.500.11937/15440 |
| _version_ | 1848748893572956160 |
|---|---|
| author | Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. |
| author_facet | Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. |
| author_sort | Carter, Damien |
| building | Curtin Institutional Repository |
| collection | Online Access |
| first_indexed | 2025-11-14T07:12:17Z |
| format | Journal Article |
| id | curtin-20.500.11937-15440 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T07:12:17Z |
| publishDate | 2009 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-154402018-12-14T00:49:09Z Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. 2009 Journal Article http://hdl.handle.net/20.500.11937/15440 10.1103/PhysRevB.80.049901 restricted |
| spellingShingle | Carter, Damien Warschkow, O. Marks, Nigel McKenzie, D. Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) |
| title | Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) |
| title_full | Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) |
| title_fullStr | Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) |
| title_full_unstemmed | Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) |
| title_short | Erratum: Electronic structure models of phosphorus d -doped silicon ([Physical Review B (2009) 79 (033204)) |
| title_sort | erratum: electronic structure models of phosphorus d -doped silicon ([physical review b (2009) 79 (033204)) |
| url | http://hdl.handle.net/20.500.11937/15440 |