Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

Doping effects with respect to the electrical properties of morphotropic phase boundary Bi0.5Na0.50.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded LaAlO30.3Sr2AlTaO60.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achi...

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Main Authors: Wang, D., Chan, N., Choy, S., Tian, Hu-Yong, Chan, L., Li, S
Format: Journal Article
Published: American Institute of Physics 2010
Online Access:http://hdl.handle.net/20.500.11937/13019
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author Wang, D.
Chan, N.
Choy, S.
Tian, Hu-Yong
Chan, L.
Li, S
author_facet Wang, D.
Chan, N.
Choy, S.
Tian, Hu-Yong
Chan, L.
Li, S
author_sort Wang, D.
building Curtin Institutional Repository
collection Online Access
description Doping effects with respect to the electrical properties of morphotropic phase boundary Bi0.5Na0.50.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded LaAlO30.3Sr2AlTaO60.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 C/cm2 and a remanent piezoelectric coefficient d33f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect.
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T07:01:50Z
publishDate 2010
publisher American Institute of Physics
recordtype eprints
repository_type Digital Repository
spelling curtin-20.500.11937-130192019-02-19T05:34:47Z Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films Wang, D. Chan, N. Choy, S. Tian, Hu-Yong Chan, L. Li, S Doping effects with respect to the electrical properties of morphotropic phase boundary Bi0.5Na0.50.94Ba0.06TiO3 thin films epitaxially grown on CaRuO3 electroded LaAlO30.3Sr2AlTaO60.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 C/cm2 and a remanent piezoelectric coefficient d33f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect. 2010 Journal Article http://hdl.handle.net/20.500.11937/13019 10.1063/1.3518484 American Institute of Physics fulltext
spellingShingle Wang, D.
Chan, N.
Choy, S.
Tian, Hu-Yong
Chan, L.
Li, S
Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
title Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
title_full Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
title_fullStr Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
title_full_unstemmed Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
title_short Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films
title_sort enhanced ferroelectric and piezoelectric properties in doped lead-free (bi0.5na0.5)0.94ba0.06tio3 thin films
url http://hdl.handle.net/20.500.11937/13019