Biocompatibility of semiconducting AlGaN/GaN material with living cells
With the aim of developing a highly sensitive, mass producible biosensor, we have investigated the growth of human embryonic kidney (HEK) 293 cells on the surface of semiconductor grade AlGaN/GaN heterostructures. Our results demonstrate that, even without specialised surface treatment, a substantia...
| Main Authors: | Podolska, Anna, Tham, S., Hart, Robert, Seeber, R., Kocan, M., Mishra, U., Pfleger, K., Parish, G., Nener, B. |
|---|---|
| Format: | Journal Article |
| Published: |
Elsevier SA
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/12988 |
Similar Items
TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)
by: Fay, Mike W., et al.
Published: (2003)
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)
by: Kocan, M., et al.
Published: (2008)
Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)
by: Fay, Mike W., et al.
Published: (2001)
EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)
by: Moldovan, Grigore, et al.
Published: (2003)
GaN HEMT gate-driver for achieving high power converter integration levels
by: Wu, H, et al.
Published: (2018)
by: Wu, H, et al.
Published: (2018)
Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
by: Moldovan, Grigore, et al.
Published: (2004)
by: Moldovan, Grigore, et al.
Published: (2004)
Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)
by: Qian, H., et al.
Published: (2016)
TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)
by: Fay, Mike W., et al.
Published: (2004)
Investigation of deep level defects in advanced semiconductor materials and devices
by: AL Saqri, Noor alhuda Ahmed
Published: (2017)
by: AL Saqri, Noor alhuda Ahmed
Published: (2017)
Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy
by: Han, Yisong
Published: (2006)
by: Han, Yisong
Published: (2006)
Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)
by: Zhu, Siwei, et al.
Published: (2018)
Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy
by: Fay, Mike W., et al.
Published: (2005)
by: Fay, Mike W., et al.
Published: (2005)
Coupling of Pyro–Piezo-Phototronic Effects in a GaN Nanowire
by: Qin, G., et al.
Published: (2023)
by: Qin, G., et al.
Published: (2023)
Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)
by: Fay, Mike W., et al.
Published: (2008)
Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties
by: Yang, K., et al.
Published: (2023)
by: Yang, K., et al.
Published: (2023)
Structural characterisation of MBE grown zinc-blende
Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)
by: Han, Y., et al.
Published: (2005)
Experimental study of the short-circuit performance
for a 600V normally-off p-gate GaN HEMT
by: Oeder, Thorsten, et al.
Published: (2017)
by: Oeder, Thorsten, et al.
Published: (2017)
Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter
by: Zeng, Y., et al.
Published: (2018)
by: Zeng, Y., et al.
Published: (2018)
GaN-HEMT dynamic ON-state resistance characterisation and modelling
by: Li, Ke, et al.
Published: (2016)
by: Li, Ke, et al.
Published: (2016)
AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013)
by: Podolska, Anna, et al.
Published: (2013)
High-frequency power conversion for photovoltaic module applications
by: Sergentanis, Grigorios
Published: (2024)
by: Sergentanis, Grigorios
Published: (2024)
Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
by: Podolska, Anna, et al.
Published: (2010)
by: Podolska, Anna, et al.
Published: (2010)
Structural and electrical characterization of AuPtAlTi ohmic
contacts to AlGaN/GaN with varying annealing temperature and
Al content
by: Fay, Mike W., et al.
Published: (2008)
by: Fay, Mike W., et al.
Published: (2008)
The electrophysiology of ionotropic glutamate receptors expressed in human cell lines, HEK293 and TE671
by: Newman, Amy
Published: (2022)
by: Newman, Amy
Published: (2022)
Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)
by: Filali, Walid, et al.
Published: (2017)
Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE
by: Goff, Lucy Elizabeth
Published: (2015)
by: Goff, Lucy Elizabeth
Published: (2015)
SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)
by: Li, Ke, et al.
Published: (2016)
SiC and GaN power transistors switching energy
evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)
by: Li, Ke, et al.
Published: (2016)
Individual device active cooling for enhanced system-level power density and more uniform temperature distribution
by: Zeng, Y., et al.
Published: (2018)
by: Zeng, Y., et al.
Published: (2018)
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
by: Oeder, Thorsten, et al.
Published: (2017)
by: Oeder, Thorsten, et al.
Published: (2017)
Design of low inductance switching power cell for GaN HEMT based inverter
by: Gurpinar, Emre, et al.
Published: (2017)
by: Gurpinar, Emre, et al.
Published: (2017)
Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter
by: Gurpinar, Emre, et al.
Published: (2016)
by: Gurpinar, Emre, et al.
Published: (2016)
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
by: Myers, M, et al.
Published: (2013)
by: Myers, M, et al.
Published: (2013)
Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
by: Jameel, D.A., et al.
Published: (2016)
by: Jameel, D.A., et al.
Published: (2016)
Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
by: Khir, F.L.M., et al.
Published: (2014)
by: Khir, F.L.M., et al.
Published: (2014)
Trade-off study of heat sink and output filter volume in a GaN HEMT based single phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)
by: Gurpinar, Emre, et al.
Published: (2017)
Tradeoff study of heat sink and output filter volume in a GaN HEMT based single-phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)
by: Gurpinar, Emre, et al.
Published: (2017)
Anisotropic electromechanical properties of GaN ceramics caused by polarisation
by: Qin, G.S., et al.
Published: (2020)
by: Qin, G.S., et al.
Published: (2020)
Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy
by: Cherns, D., et al.
Published: (2014)
by: Cherns, D., et al.
Published: (2014)
Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters
by: Gurpinar, Emre, et al.
Published: (2016)
by: Gurpinar, Emre, et al.
Published: (2016)
Similar Items
-
TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003) -
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008) -
Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001) -
EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003) -
GaN HEMT gate-driver for achieving high power converter integration levels
by: Wu, H, et al.
Published: (2018)