Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices; these devices are sensitive to the ion concentration rather than to the pH of the solution. Sheet resistance as a function of pH for calibrated pH solutions and dilute NaOH, HCl, KOH, and NaCl showed an increase as...
| Main Authors: | Podolska, Anna, Kocan, M., Garces Cabezas, A., Wilson, T., Umana-Membreno, G., Nener, B., Parish, G., Keller, S., Mishra, U. |
|---|---|
| Format: | Journal Article |
| Published: |
American Institute of Physics
2010
|
| Online Access: | http://hdl.handle.net/20.500.11937/11642 |
Similar Items
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)
by: Kocan, M., et al.
Published: (2008)
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
by: Myers, M, et al.
Published: (2013)
by: Myers, M, et al.
Published: (2013)
Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)
by: Podolska, Anna, et al.
Published: (2012)
AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013)
by: Podolska, Anna, et al.
Published: (2013)
Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
by: Khir, F.L.M., et al.
Published: (2014)
by: Khir, F.L.M., et al.
Published: (2014)
TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)
by: Fay, Mike W., et al.
Published: (2003)
Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
by: Maneea Eizadi Sharifabad,, et al.
Published: (2011)
by: Maneea Eizadi Sharifabad,, et al.
Published: (2011)
The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)
by: Mohamad, Mazuina, et al.
Published: (2008)
Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)
by: Alias, Ezzah A., et al.
Published: (2020)
The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)
The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)
Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)
by: Fay, Mike W., et al.
Published: (2001)
Ion-selective membrane-integrated water-gated AlGaN/GaN HEMT for high-stability detection of agricultural herbicides
by: Firdaus, Amirul, et al.
Published: (2025)
by: Firdaus, Amirul, et al.
Published: (2025)
In GaN Double Heterostructure (DH) Laser Diode Performance
And Optimization.
by: Thahab, S M, et al.
Published: (2007)
by: Thahab, S M, et al.
Published: (2007)
Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)
by: Alias, Ezzah A., et al.
Published: (2020)
Structural and electrical characterization of AuPtAlTi ohmic
contacts to AlGaN/GaN with varying annealing temperature and
Al content
by: Fay, Mike W., et al.
Published: (2008)
by: Fay, Mike W., et al.
Published: (2008)
Surface reaction of undoped AlGaN/GaN HEMT based two terminal device in H+ and OH- ion-contained aqueous solution
by: Mastura Shafinaz Zainal Abidin,, et al.
Published: (2013)
by: Mastura Shafinaz Zainal Abidin,, et al.
Published: (2013)
Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)
by: Qian, H., et al.
Published: (2016)
Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)
Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
by: Thahab, S M, et al.
Published: (2007)
by: Thahab, S M, et al.
Published: (2007)
Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)
by: Yusnizam, Yusuf
Published: (2017)
Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
by: Czerniuk, T., et al.
Published: (2017)
by: Czerniuk, T., et al.
Published: (2017)
Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
by: Samsudin, M. E. A., et al.
Published: (2019)
by: Samsudin, M. E. A., et al.
Published: (2019)
Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
by: Ahmad, M. A., et al.
Published: (2019)
by: Ahmad, M. A., et al.
Published: (2019)
Anharmonic phonon decay in cubic GaN
by: Cuscó, R., et al.
Published: (2015)
by: Cuscó, R., et al.
Published: (2015)
Innovative Developments in GaN-based Technology
by: Hassan, Zainuriah
Published: (2016)
by: Hassan, Zainuriah
Published: (2016)
Anisotropic electromechanical properties of GaN ceramics caused by polarisation
by: Qin, G.S., et al.
Published: (2020)
by: Qin, G.S., et al.
Published: (2020)
The influence of temperature on the electrical conductivity of GaN piezoelectric semiconductors
by: Qiao, Y., et al.
Published: (2023)
by: Qiao, Y., et al.
Published: (2023)
EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)
by: Moldovan, Grigore, et al.
Published: (2003)
Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
by: C, W Chin, et al.
Published: (2007)
by: C, W Chin, et al.
Published: (2007)
Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M, et al.
Published: (2020)
by: Asri, R. I. M, et al.
Published: (2020)
Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M., et al.
Published: (2020)
by: Asri, R. I. M., et al.
Published: (2020)
Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)
Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)
by: Zainal, Norzaini
Published: (2016)
Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy
by: Fay, Mike W., et al.
Published: (2005)
by: Fay, Mike W., et al.
Published: (2005)
Electric current dependent fracture in GaN piezoelectric semiconductor ceramics
by: Qin, G., et al.
Published: (2018)
by: Qin, G., et al.
Published: (2018)
Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
by: Yusuf, Yusnizam, et al.
Published: (2020)
by: Yusuf, Yusnizam, et al.
Published: (2020)
Influence of polarization on the electromechanical properties of GaN piezoelectric semiconductive ceramics
by: Zhao, M., et al.
Published: (2018)
by: Zhao, M., et al.
Published: (2018)
Electric current-restrained crack propagation in brittle GaN ceramics
by: Zhao, M.H., et al.
Published: (2021)
by: Zhao, M.H., et al.
Published: (2021)
Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)
by: Wei-Ching Huang,, et al.
Published: (2013)
Similar Items
-
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008) -
Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
by: Myers, M, et al.
Published: (2013) -
Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012) -
AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013) -
Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
by: Khir, F.L.M., et al.
Published: (2014)