Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices; these devices are sensitive to the ion concentration rather than to the pH of the solution. Sheet resistance as a function of pH for calibrated pH solutions and dilute NaOH, HCl, KOH, and NaCl showed an increase as...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
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American Institute of Physics
2010
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| Online Access: | http://hdl.handle.net/20.500.11937/11642 |
| _version_ | 1848747860693090304 |
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| author | Podolska, Anna Kocan, M. Garces Cabezas, A. Wilson, T. Umana-Membreno, G. Nener, B. Parish, G. Keller, S. Mishra, U. |
| author_facet | Podolska, Anna Kocan, M. Garces Cabezas, A. Wilson, T. Umana-Membreno, G. Nener, B. Parish, G. Keller, S. Mishra, U. |
| author_sort | Podolska, Anna |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices; these devices are sensitive to the ion concentration rather than to the pH of the solution. Sheet resistance as a function of pH for calibrated pH solutions and dilute NaOH, HCl, KOH, and NaCl showed an increase as a function of ionic concentration, regardless of whether the pH was acidic, basic, or neutral. An increase in resistance corresponds to accumulation of negative ions at the AlGaN surface, indicating device selectivity toward the negative ions. We attribute this to the formation of a double layer at the liquid/semiconductor interface. |
| first_indexed | 2025-11-14T06:55:52Z |
| format | Journal Article |
| id | curtin-20.500.11937-11642 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T06:55:52Z |
| publishDate | 2010 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-116422017-09-13T14:59:19Z Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices Podolska, Anna Kocan, M. Garces Cabezas, A. Wilson, T. Umana-Membreno, G. Nener, B. Parish, G. Keller, S. Mishra, U. We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices; these devices are sensitive to the ion concentration rather than to the pH of the solution. Sheet resistance as a function of pH for calibrated pH solutions and dilute NaOH, HCl, KOH, and NaCl showed an increase as a function of ionic concentration, regardless of whether the pH was acidic, basic, or neutral. An increase in resistance corresponds to accumulation of negative ions at the AlGaN surface, indicating device selectivity toward the negative ions. We attribute this to the formation of a double layer at the liquid/semiconductor interface. 2010 Journal Article http://hdl.handle.net/20.500.11937/11642 10.1063/1.3462323 American Institute of Physics restricted |
| spellingShingle | Podolska, Anna Kocan, M. Garces Cabezas, A. Wilson, T. Umana-Membreno, G. Nener, B. Parish, G. Keller, S. Mishra, U. Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices |
| title | Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices |
| title_full | Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices |
| title_fullStr | Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices |
| title_full_unstemmed | Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices |
| title_short | Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices |
| title_sort | ion versus ph sensitivity of ungated algan/gan heterostructure-based devices |
| url | http://hdl.handle.net/20.500.11937/11642 |