In situ X-ray synchrotron study of organic semiconductor ultra-thin films growth

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In situ X-ray synchrotron study of organic semiconductor ultra-thin films growth

In this work we present an X-ray diffraction study of the early stages of growth of an organic semiconductor (sexithiophene, T-6) thin film prepared by high vacuum sublimation. Specular reflectometry and grazing incidence X-ray diffraction were used to monitor the formation of T-6 films on silicon o...

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Bibliographic Details
Main Authors:	Moulin, J., Dinelli, F., Massi, Massimiliano, Albonetti, C., Kshirsagar, R., Biscarini, F.
Format:	Journal Article
Published:	Elsevier 2006
Subjects:	structure X-ray reflectivity thin films organic semiconductors
Online Access:	http://hdl.handle.net/20.500.11937/11113

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