Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism
In the age when the miniaturization trend that has driven the semiconductor industry is reaching its limits, organic modification of semiconductors is emerging as a field that could give much-needed impetus. We review the current state of understanding of the functionalization of C(100), Si(100), an...
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| Format: | Book Chapter |
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Imperial College Press
2006
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| Online Access: | http://ebooks.worldscinet.com/physics/9781860948053/9781860948053.shtml http://hdl.handle.net/20.500.11937/10096 |
| _version_ | 1848746138141720576 |
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| author | Bilic, Ante Reimers, J. Hush, N. |
| author2 | Gruetter, P. |
| author_facet | Gruetter, P. Bilic, Ante Reimers, J. Hush, N. |
| author_sort | Bilic, Ante |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | In the age when the miniaturization trend that has driven the semiconductor industry is reaching its limits, organic modification of semiconductors is emerging as a field that could give much-needed impetus. We review the current state of understanding of the functionalization of C(100), Si(100), and Ge(100) surfaces through chemisorption of alkenes and alkynes, focussing on adsorbate structural control. While reactions on C(100) show most of the properties expected for concerted cycloaddition reactions such as [2+2] and [4+2] (Diels-Alder) processes, reactions on Si(100) present a wide range of variant behaviour, including in some cases the prominence of non-cycloaddition products. More general stepwise free-radical addition processes are seen to provide a better description of reactions on Si(100), their prominence being attributed to either the non-existence or ineffectiveness of p bonding within surface silicon dimers. The investigations of these systems provide not only insight into driving mechanisms for chemisorption but also motivation for the development of new techniques of organic functionalization on semiconductors. |
| first_indexed | 2025-11-14T06:28:29Z |
| format | Book Chapter |
| id | curtin-20.500.11937-10096 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T06:28:29Z |
| publishDate | 2006 |
| publisher | Imperial College Press |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-100962017-08-23T07:20:32Z Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism Bilic, Ante Reimers, J. Hush, N. Gruetter, P. Rosei, F. Hofer, W. semiconductor functionalization - p bonding. free-radical reactions cycloaddition silicon dimer surface structure chemisorption In the age when the miniaturization trend that has driven the semiconductor industry is reaching its limits, organic modification of semiconductors is emerging as a field that could give much-needed impetus. We review the current state of understanding of the functionalization of C(100), Si(100), and Ge(100) surfaces through chemisorption of alkenes and alkynes, focussing on adsorbate structural control. While reactions on C(100) show most of the properties expected for concerted cycloaddition reactions such as [2+2] and [4+2] (Diels-Alder) processes, reactions on Si(100) present a wide range of variant behaviour, including in some cases the prominence of non-cycloaddition products. More general stepwise free-radical addition processes are seen to provide a better description of reactions on Si(100), their prominence being attributed to either the non-existence or ineffectiveness of p bonding within surface silicon dimers. The investigations of these systems provide not only insight into driving mechanisms for chemisorption but also motivation for the development of new techniques of organic functionalization on semiconductors. 2006 Book Chapter http://hdl.handle.net/20.500.11937/10096 http://ebooks.worldscinet.com/physics/9781860948053/9781860948053.shtml Imperial College Press fulltext |
| spellingShingle | semiconductor functionalization - p bonding. free-radical reactions cycloaddition silicon dimer surface structure chemisorption Bilic, Ante Reimers, J. Hush, N. Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism |
| title | Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism |
| title_full | Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism |
| title_fullStr | Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism |
| title_full_unstemmed | Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism |
| title_short | Functionalization of semiconductor surfaces by organic layers: Concerted cycloaddition versus stepwise free-radical reaction mechanism |
| title_sort | functionalization of semiconductor surfaces by organic layers: concerted cycloaddition versus stepwise free-radical reaction mechanism |
| topic | semiconductor functionalization - p bonding. free-radical reactions cycloaddition silicon dimer surface structure chemisorption |
| url | http://ebooks.worldscinet.com/physics/9781860948053/9781860948053.shtml http://hdl.handle.net/20.500.11937/10096 |