Search Results - Song, T. L.

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    Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire

    Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire by Song, T. L.

    Published 2005
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    Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)]

    Erratum: “Strain relaxation due to V-pit formation in In[sub x]Ga[sub 1−x]N∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] by Song, T. L., Chua, S. J., Fitzgerald, E. A.

    Published 2006
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