Search Results - Kudrynskyi, Zakhar

Improved performance of InSe field-effect transistors by channel encapsulation by Liang, Guangda, Wang, Yiming, Han, Lin, Yang, Zai-xing, Xin, Qian, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Song, Aimin

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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe by Balakrishnan, Nilanthy, Steer, Elisabeth D., Smith, Emily F., Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Eaves, Laurence, Patanè, Amalia, Beton, Peter H.

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Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation by Balakrishnan, Nilanthy, Kudrynskyi, Zakhar R., Smith, Emily F., Fay, Michael W., Makarovsky, Oleg, Kovalyuk, Zakhar D., Eaves, Laurence, Beton, Peter H., Patanè, Amalia

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Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire by Beardsley, R.P., Akimov, Andrey V., Greener, Jake D.G., Mudd, Gary W., Sandeep, Sathyan, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Kent, Anthony J.

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Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions by Balakrishnan, Nilanthy, Kudrynskyi, Zakhar R., Fay, Mike W., Mudd, Garry W., Svatek, Simon A., Makarovsky, Oleg, Kovalyuk, Zakhar D., Eaves, Laurence, Beton, Peter H., Patanè, Amalia

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Highly-mismatched InAs/InSe heterojunction diodes by Velichko, A., Kudrynskyi, Zakhar R., Di Paola, D.M., Makarovsky, Oleg, Kesaria, M., Krier, A., Sandall, I.C., Tan, C.H., Kovalyuk, Zakhar D., Patanè, Amalia

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Coherent acoustic phonons in van der Waals nanolayers and heterostructures by Greener, Jake D.G., Akimov, Andrey V., Gusev, V., Kudrynskyi, Zakhar, Beton, Peter H., Kovalyuk, Zakhar D., Taniguchi, Takashi, Watanabe, Kenji, Kent, A.J., Patanè, Amalia

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Magnetotransport and lateral confinement in an InSe van der Waals heterostructure by Lee, Yongjin, Pisoni, Riccardo, Overweg, Hiske, Eich, Marius, Rickhaus, Peter, Patane, Amalia, Kudrynskyi, Zakhar, Kovalyuk, Zakhar D., Gorbachev, Roman, Watanabe, Kenji, Taniguchi, Takashi, Ihn, Thomas, Ensslin, Klaus

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Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport by Balakrishnan, Nilanthy, Staddon, Christopher R., Smith, Emily F., Stec, Jakub, Gay, Dean, Mudd, Garry W., Makarovsky, Oleg, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Eaves, Laurence, Patanè, Amalia, Beton, Peter H.

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A giant quantum Hall plateau in graphene coupled to an InSe van der Waals crystal by Kudrynskyi, Zakhar R., Bhuiyan, Mahabub A., Makarovsky, Oleg, Greener, Jake D.G., Vdovin, Evgeny E., Kovalyuk, Zakhar D., Cao, Y., Mishchenko, A., Novoselov, K.S., Beton, Peter H., Eaves, Laurence, Patanè, Amalia

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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals by Mudd, G.W., Molas, M.R., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Yusa, G., Makarovsky, Oleg, Eaves, Laurence, Potemski, M., Fal'ko, V.I., Patanè, Amalia

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Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal by Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael, Parmenter, Christopher D.J., Kovalyuk, Zakhar D., Fielding, Alistair John, Kern, Michal, van Slageren, Joris, Patanè, Amalia

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High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures by Mudd, Garry W., Svatek, Simon A., Hague, Lee, Makarovsky, Oleg, Kudrynskyi, Zakhar R., Mellor, Christopher J., Beton, Peter H., Eaves, Laurence, Novoselov, Kostya S., Kovalyuk, Zakhar D., Vdovin, Evgeny E., Marsden, Alex J., Wilson, Neil R., Patanè, Amalia

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Gate-defined quantum confinement in InSe-based van der Waals heterostructures by Hamer, Matthew James, Tovari, Endre, Zhu, Mengjian, Thompson, Michael, Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre, Gorbachev, R.V.

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Photo-quantum Hall effect and light-induced charge transfer at the interface of graphene/InSe heterostructures by Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Mazumder, Debarati, Greener, Jake D.G., Makarovsky, Oleg, Mellor, Christopher J., Vdovin, Evgeny E., Piot, Benjamin A., Lobanova, Inna I., Kovalyuk, Zakhar D., Nazarova, Marina, Mishchenko, Artem, Novoselov, Kostya S., Eaves, Laurence, Cao, Yang, Yusa, Go, Patanè, Amalia

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High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe by Bandurin, Denis A., Tyurnina, Anastasia V., Yu, Geliang L., Mishchenko, Artem, Zólyomi, Viktor, Morozov, Sergey V., Kumar, Roshan Krishna, Gorbachev, Roman V., Kudrynskyi, Zakhar R., Pezzini, Sergio, Kovalyuk, Zakhar D., Zeitler, Uli, Novoselov, Konstantin S., Patanè, Amalia, Eaves, Laurence, Grigorieva, Irina V., Fal'ko, V.I., Geim, Andre K., Cao, Yang

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