Search Results - Kappers, M.

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  1. 1
    Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

    Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells by Bennett, S., Saxey, David, Kappers, M., Barnard, J., Humphreys, C., Smith, G., Oliver, R.

    Published 2011
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  2. 2
    Microstructural origins of localization in InGaN quantum wells

    Microstructural origins of localization in InGaN quantum wells by Oliver, R., Bennett, S., Zhu, T., Beesley, D., Kappers, M., Saxey, David, Cerezo, A., Humphreys, C.

    Published 2010
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  3. 3
    Atom probe tomography studies of gan-based semiconductor materials

    Atom probe tomography studies of gan-based semiconductor materials by Bennett, S., Oliver, R., Saxey, David, Cerezo, A., Clifton, P., Ulfig, R., Kappers, M., Humphreys, C.

    Published 2009
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  4. 4
    Three-dimensional atom probe analysis of green- and blue-emitting In x Ga1-x NGaN multiple quantum well structures

    Three-dimensional atom probe analysis of green- and blue-emitting In x Ga1-x NGaN multiple quantum well structures by Galtrey, M., Oliver, R., Kappers, M., Humphreys, C., Clifton, P., Larson, D., Saxey, David, Cerezo, A.

    Published 2008
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