Search Results - Humphreys, C.J.

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    Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

    Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source by Novikov, Sergei V., Staddon, C.R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.

    Published 2016
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  2. 2
    Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

    Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source by Novikov, Sergei V., Staddon, Christopher R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.

    Published 2016
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  3. 3
    Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

    Characterization of p-GaN1−xAsx/n-GaN PN junction diodes by Qian, H., Lee, K.B., Vajargah, S.Hosseini, Novikov, S.V., Guiney, I., Zhang, S., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J., Houston, P.A.

    Published 2016
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