Search Results - Humphreys, C.

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  1. 1
    Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

    Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells by Bennett, S., Saxey, David, Kappers, M., Barnard, J., Humphreys, C., Smith, G., Oliver, R.

    Published 2011
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  2. 2
    Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

    Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy by Bennett, S., Smeeton, T., Saxey, David, Smith, G., Hooper, S., Heffernan, J., Humphreys, C., Oliver, R.

    Published 2012
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  3. 3
    Microstructural origins of localization in InGaN quantum wells

    Microstructural origins of localization in InGaN quantum wells by Oliver, R., Bennett, S., Zhu, T., Beesley, D., Kappers, M., Saxey, David, Cerezo, A., Humphreys, C.

    Published 2010
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  4. 4
    Atom probe tomography studies of gan-based semiconductor materials

    Atom probe tomography studies of gan-based semiconductor materials by Bennett, S., Oliver, R., Saxey, David, Cerezo, A., Clifton, P., Ulfig, R., Kappers, M., Humphreys, C.

    Published 2009
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  5. 5
    Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

    Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source by Novikov, Sergei V., Staddon, C.R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.

    Published 2016
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  6. 6
    Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

    Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source by Novikov, Sergei V., Staddon, Christopher R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.

    Published 2016
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  7. 7
    Three-dimensional atom probe analysis of green- and blue-emitting In x Ga1-x NGaN multiple quantum well structures

    Three-dimensional atom probe analysis of green- and blue-emitting In x Ga1-x NGaN multiple quantum well structures by Galtrey, M., Oliver, R., Kappers, M., Humphreys, C., Clifton, P., Larson, D., Saxey, David, Cerezo, A.

    Published 2008
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  8. 8
    Characterization of p-GaN1−xAsx/n-GaN PN junction diodes

    Characterization of p-GaN1−xAsx/n-GaN PN junction diodes by Qian, H., Lee, K.B., Vajargah, S.Hosseini, Novikov, S.V., Guiney, I., Zhang, S., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J., Houston, P.A.

    Published 2016
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