Search Results - Gorbachev, R.V.

Resonant tunnelling and negative differential conductance in graphene transistors by Britnell, L., Gorbachev, R.V., Geim, A.K., Ponomarenko, L.A., Mishchenko, A., Greenaway, M.T., Fromhold, T.M., Novoselov, K.S., Eaves, Laurence

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Observation of spin and valley splitting of Landau levels under magnetic tunneling in graphene/boron nitride/graphene structures by Khanin, Yu.N., Vdovin, E.E., Larkin, I.A., Makarovsky, O., Sklyueva, Yu.A., Mishchenko, A., Wang, Yi Bo, Kozikov, A., Gorbachev, R.V., Novoselov, K.S.

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Gate-defined quantum confinement in InSe-based van der Waals heterostructures by Hamer, Matthew James, Tovari, Endre, Zhu, Mengjian, Thompson, Michael, Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre, Gorbachev, R.V.

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Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures by Mishchenko, A., Tu, J.S., Cao, Y., Gorbachev, R.V., Wallbank, J.R., Greenaway, M.T., Morozov, S.V., Morozov, V.E., Zhu, M.J., Wong, S.L., Withers, F., Woods, C.R., Kim, Y.-J., Watanabe, Kenji, Taniguchi, Takashi, Vdovin, Evgeny E., Makarovsky, Oleg, Fromhold, T.M., Fal'ko, V.I., Geim, A.K., Eaves, Laurence, Novoselov, K.S.

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