Search Results - Brasil, M.J.S.P.

Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes by Galeti, H.V.A., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D., Henini, M.

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Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices by Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., Brasil, M.J.S.P., Taylor, David, Henini, M.

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Circular polarization in n-type resonant tunneling diodes with Si delta-doping in the quantum well by Herval, L.K S., Galeti, H.V.A., Orsi Gordo, V., Galvao Gobato, Y., Brasil, M.J.S.P., Taylor, D., Henini, M.

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Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes by Rodrigues, D.H., Brasil, M.J.S.P., Orlita, M., Kunc, J., Galeti, H.V.A., Henini, M., Taylor, D., H.V.A., Y.G.

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