Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM
The atomic structure of a SiGe/Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance electron microscope equipped with a high-angle annular dark-field detector and an energy-dispersive spect...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4240948/ |